PE80H11 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stabi.
General Features
* VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
* High density cell design for ultra low Rdson
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